2 emitter 3 collector 1 base general purpose transistor pnp silicon maximum ratings rating symbol v alue unit collector?emitter voltage v ceo ? 60 vdc collector?base voltage v cbo ? 60 vdc emitter?base voltage v ebo ? 5.0 vdc collector current ? continuous i c ? 600 madc thermal characteristics characteristic symbol max unit total device dissipation fr? 5 board, (1) p d 150 mw t a = 25c thermal resistance, junction to ambient r ja 833 c/w junction and storage temperature t j , t stg ?55 to +150 c device marking m mbt2907awt1 = 20 electrical characteristics (t a = 25c unless otherwise noted.) characteristic symbol min max unit off characteristics collector?emitter breakdown voltage(2) v (br)ceo ?60 ? vdc (i c = ? 10 madc, i b = 0) collector?emitter breakdown voltage v (br)cbo ?60 ? vdc (i c = ? 10 madc, i e = 0) emitter?base breakdown voltage v (br)ebo ?5.0 ? vdc (i e = ?10 adc, i c = 0) base cutoff current i bl ? ? 50 nadc ( v ce = ?30vdc, v eb(off) = ?0.5vdc ) collector cutoff current i cex ? ? 50 nadc ( v ce = ?30vdc, v eb(off) = ?0.5vdc ) 1. fr?5 = 1.0 x 0.75 x 0.062 in. 2. pulse test: pulse width < 300 s, duty cycle < 2.0%. sotC323 feature ordering information device marking shipping m mbt2907awt1 20 3000/tape&reel r compliance with rohs requirements. we declare that the material of product mm bt2907awt1 2012-11 willas electronic corp. preliminary
electrical characteristics (t a = 25c unless otherwise noted) (continued) characteristic symbol min max unit on characteristics dc current gain(1) h fe ?? (i c =?0.1 madc, v ce =?10 vdc) 75 ?? (i c = ?1.0 madc, v ce = ?10 vdc) 100 ?? (i c = ?10 madc, v ce = ?10 vdc) 100 ?? (i c = ?150madc, v ce = ?10vdc) 100 ?? (i c = ?500madc, v ce =?10 vdc) 50 ?? collector?emitter saturation voltage(1) v ce(sat) vdc (i c = ?150 madc, i b = ?15 madc) ?? ?0.4 (i c = ?500 madc, i b = ?50 madc) ?? ?1.6 base?emitter saturation voltage(1) v be(sat) vdc (i c = ?150 madc, i b = ?15madc) ?? ?1.3 (i c = ?500madc, i b = ?50madc ) ?? ?2.6 smallCsignal characteristics current?gain ? bandwidth product(4) f t 200 ?? mhz (i c = ?50madc, v ce = 20vdc, f = 100mhz) output capacitance (v cb = ?10 vdc, i e = 0, f = 1.0 mhz) c obo ?? 8.0 pf input capacitance c ibo ?? 30 pf (v eb = ?2.0vdc, i c = 0, f = 1.0 mhz) switching characteristics turn?on time (v cc = ?30 vdc, t on ?4 5 delay time i c = ?150 madc, i b1 = ?15 madc) t d ?1 0n s rise time t r ?4 0 storage time (v cc = ?6.0 vdc, t s ?8 0 fall time i c = ?150 madc,i b1 = i b2 = 15 madc) t f ?3 0n s turn?off time t off ? 100 1. pulse test: pulse width < 300 s, duty cycle < 2.0%. 2012-11 willas electronic corp. general purpose transistor mm bt2907awt1 preliminary
0.7 1.9 0.028 0.65 0.025 0.65 0.025 inches mm 0.075 0.035 0.9 sot - 323 2012-11 willas electronic corp. general purpose transistor mm bt2907awt1 dimensions in inches and (millimeters) .056(1.40) .047(1.20) .096(2.45) .078(2.00) .004(0.10)min. .010(0.25) .003(0.08) .043(1.10) .032(0.80) .016(0.40) .008(0.20) .004(0.10)max. .087(2.20) .070(1.80) .054(1.35) .045(1.15) preliminary
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